2SA1096 データシート PDF

Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497, 2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPT

Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0

2SA1981(3CG1981) 硅 PNP 半 三 管, SILICON PNP TRANSISTOR 用途:用于音 功率放大。 Purpose: Audio power amplifier application. 特点:高放大， 2SC5344(3DG5344)互 。 Features: High hFE, complementary pair with 2SC5344(3DG5344). 限 , Absolute maximum ratings(Ta=25℃) 符

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1981 TRANSISTOR (PNP) FEATURES - High DC Current Gain - Complementary Pair with 2SC5344 TO 92 1. EMITTER 2. COLLECTOR 3. BASE APPLICATIONS - Audio Power Amplifier Application MAXIMUM RATINGS (Ta=25℃ un

Elektronische Bauelemente 2SA1036K PNP Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES A L 3 S Top View 21 B SC-59 Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 n RoHS Compliant Product n Large IC. ICMax.= -500 mA n Low VCE(sat). Ideal for low-volt