2SA109 データシート PDF

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1093 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected t

2SA1981(3CG1981) 硅 PNP 半 三 管, SILICON PNP TRANSISTOR 用途:用于音 功率放大。 Purpose: Audio power amplifier application. 特点:高放大， 2SC5344(3DG5344)互 。 Features: High hFE, complementary pair with 2SC5344(3DG5344). 限 , Absolute maximum ratings(Ta=25℃) 符

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1981 TRANSISTOR (PNP) FEATURES - High DC Current Gain - Complementary Pair with 2SC5344 TO 92 1. EMITTER 2. COLLECTOR 3. BASE APPLICATIONS - Audio Power Amplifier Application MAXIMUM RATINGS (Ta=25℃ un

Elektronische Bauelemente 2SA1036K PNP Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES A L 3 S Top View 21 B SC-59 Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 n RoHS Compliant Product n Large IC. ICMax.= -500 mA n Low VCE(sat). Ideal for low-volt