2SA1016 データシート PDF

Ordering number:EN572D PNP, NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K, 2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003A [2SA1016, 1016K, 2SC2362, 2362K] ( ) : 2SA1016, 1016K Specifications JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Col

2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

2SA1981(3CG1981) 硅 PNP 半 三 管, SILICON PNP TRANSISTOR 用途:用于音 功率放大。 Purpose: Audio power amplifier application. 特点:高放大， 2SC5344(3DG5344)互 。 Features: High hFE, complementary pair with 2SC5344(3DG5344). 限 , Absolute maximum ratings(Ta=25℃) 符

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1981 TRANSISTOR (PNP) FEATURES - High DC Current Gain - Complementary Pair with 2SC5344 TO 92 1. EMITTER 2. COLLECTOR 3. BASE APPLICATIONS - Audio Power Amplifier Application MAXIMUM RATINGS (Ta=25℃ un

Elektronische Bauelemente 2SA1036K PNP Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES A L 3 S Top View 21 B SC-59 Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 n RoHS Compliant Product n Large IC. ICMax.= -500 mA n Low VCE(sat). Ideal for low-volt