SIR424DPの購入情報と機能

Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for co

New Product N-Channel 30 V (D-S) MOSFET SiR864DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) ( ) 0.0036 at VGS = 10 V 0.0045 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 40g 40g Qg (Typ.) 20 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg

SiR472DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 6.8 nC FEATURES Halogen-free TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile Optimized

N-Channel 30 V (D-S) MOSFET SiR172ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) ( ) Max. 30 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V ID (A)a, g 24 24 Qg (Typ.) 12.8 nC PowerPAK SO-8 FEATURES TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profi