IRFS7730PBFの購入情報と機能
| この部品の機能は「Power MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRFS7730PbF MOSFET | Power MOSFET, Transistor Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC, DC and AC, DC converters DC, AC inverte |
International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF132 | N-Channel Power MOSFETs/ 20 A/ 60-100 V |  Fairchild Semiconductor |
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| IRF614B | 250V N-Channel MOSFET IRF614B, IRFS614B
November 2001
IRF614B, IRFS614B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-st |
Fairchild Semiconductor |
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| IRF830AS | Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A) PD- 92006A
SMPS MOSFET
IRF830AS, L
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching
l
VDSS
500V
RDS(on) max
1.40Ω
ID
5.0A
Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche |
International Rectifier |
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| IRF7241 | HEXFET Power MOSFET PD- 94087
IRF7241
HEXFET® Power MOSFET
q q q q
Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel
VDSS
-40V
RDS(on) max (mΩ)
41@VGS = -10V 70@VGS = -4.5V
ID
-6.2A -5.0A
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanc |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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